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| STU/D432S SamHop Microelectronics Corp. Nov,19,2007 ver1.4 N-Channel Logic Level Enhancement Mode Field Effect Transistor 4 PRODUCT SUMMARY VDSS 40V FEATURES ( m W ) Max ID 50A RDS(ON) Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. D 9 @ VGS = 10V D G S G D S G STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @Ta -Pulsed a Drain-Source Diode Forward Current Avalanche Current Avalanche Energy c a Symbol VDS VGS a Limit 40 20 50 100 20 23 130 50 -55 to 175 Unit V V A A A A mJ W C 25 C ID IDM IS IAS EAS PD TJ, TSTG b c Maximum Power Dissipation Ta= 25 C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W 1 STU/D432S ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter 5 Symbol BVDSS IDSS IGSS a Condition VGS = 0V, ID = 250uA VDS = 32V, VGS =0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS= 10V , ID =10A VGS = 4.5V, ID =5A VDS = 10V, VGS = 10V VDS = 10V, ID = 10A Min Typ Max Unit 40 1 V uA 100 nA 1.25 1.6 7 9 30 28 1130 240 145 3 9 11 V m ohm m ohm OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) ID(ON) gFS b Drain-Source On-State Resistance On-State Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDS =15V, VGS = 0V f =1.0MHZ SWITCHING CHARACTERISTICS b Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15V ID = 10 A VGS = 10V RGEN = 3.3 ohm VDS =15V, ID =10A,VGS =10V VDS =15V, ID =10A,VGS =4.5V VDS =15V, ID = 10A VGS =10V 2 18 22 61 9.6 23.5 11.5 2.7 3.2 ns ns ns ns nC nC nC nC S T U/D432S E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is = 20A Min Typ Max Unit 0.91 1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 100 V G S =10V 80 V G S =4V 48 V G S =3.5V 60 c. Start ing TJ=25 c , L = 0.5 mH , RG = 25W , IAS = 23 A, VDD < V(BR)DSS ( See Figure13 ) 60 ID, Drain C urrent(A) ID, Drain C urrent (A) 36 -55 C 24 T j=125 C 12 0 25 C 40 V G S =3V 20 V G S =2.5V 0 0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 20 F igure 2. Trans fer C haracteris tics 2.0 R DS (ON), On-R es is tance Normalized 1.8 1.6 1.4 1.2 1.0 0 V G S =10V ID=10A 16 R DS (on) (m W) 12 8 4 V G S =4.5V V G S =4.5V ID=5A V G S =10V 1 1 20 40 60 80 100 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 S T U/D432S B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.40 ID=250uA 1.30 1.20 1.10 1.00 0.90 0.80 -50 -25 0 25 50 75 100 125 150 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 30 F igure 6. B reakdown V oltage V ariation with T emperature 60 ID=10A Is , S ource-drain current (A) 25 R DS (on) (m W) 20 125 C 15 10 75 C 5 0 25 C 20 125 C 25 C 10 0 2 4 6 8 10 1 0 0.24 0.48 0.72 0.96 1.20 V G S , G ate- S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 STU/D432S 1800 1500 Ciss 10 VGS, Gate to Source Voltage (V) 8 6 4 2 0 VDS=15V ID=10A C, Capacitance (pF) 1200 900 600 Coss 300 Crss 0 0 5 10 15 20 25 30 6 0 4 8 12 16 20 24 28 32 VDS, Drain-to Source Voltage (V) Qg, Total Gate Charge (nC) Figure 9. Capacitance Figure 10. Gate Charge 350 600 100 Lim it (O 10 Switching Time (ns) ID, Drain Current (A) 100 60 10 TD(off ) Tr Tf TD(on) 1m 10 s 10 RD 0m ms N) s S 1s DC 1 1 V DS =15V ,ID=10A V G S =10V 1 0.5 0.1 VGS=10V Single Pulse Tc=25 C 6 10 60 100 300 600 1 10 30 60 Rg, Gate Resistance (W) VDS, Drain-Source Voltage (V) Figure 11.switching characteristics Figure 12. Maximum Safe Operating Area 5 STU/D432S 15V V ( BR )D S S tp D R IVE R VDS L RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit F igure 13a. Unclamped Inductive Waveforms F igure 13b. 2 1 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10 -5 -4 -3 -2 -1 P DM t1 t2 1. RcJA (t)=r (t) * RcJA 2. RcJA=See Datasheet 3. TJM-TA = PDM* RcJA (t) 4. Duty Cycle, D=t1/t2 10 10 10 1 10 10 Square Wave Pulse Duration (sec) Figure 14. Normalized Thermal Transient Impedance Curve 6 S T U/D432S 7 S T U/D432S E b3 L3 A C2 E1 D H L4 e b2 b L2 L L1 A1 C2 b b2 b3 L2 A1 L4 L L1 L3 10 483 0.814 864 232 0.508 6.000 6.400 4.902 2.290 9.601 0.010 0.066 1.397 2.743 1.100 387 0.584 0.889 1.092 436 REF. 00 6.604 5.004 BSC 210 0.127 0.940 1.651 REF. REF. 7 0.019 32 4 6 0.020 36 0.193 0.090 78 0.0004 0.026 0.055 0.108 0.043 4 0.023 0.035 43 4 REF. 4 0.197 BSC 402 0.005 0.037 0.065 REF. REF. 8 S T U/D432S TO-251 Tube TO251 Tube/TO-252 Tape and Reel Data " A" TO-252 Carrier Tape UNIT:P PACKAGE TO-252 (16 P) A0 6.80 O0.1 B0 10.3 O0.1 K0 2.50 O0.1 D0 r2 D1 r1.5 + 0.1 -0 E 16.0 0.3O E1 1.75 0.1O E2 7.5 O0.15 P0 8.0 O0.1 P1 4.0 O0.1 P2 2.0 O0.15 T 0.3 O0.05 TO-252 Reel S UNIT:P TAPE SIZE 16 P REEL SIZE r 330 M r330 O 0.5 N r97 O 1.0 W 17.0 + 1.5 -0 T 2.2 H r13.0 + 0.5 - 0.2 K 10.6 S 2.0 O0.5 G R V 9 |
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